Indium-Tin Oxide (ITO) thin films deposited at low substrate temperature on bare corning glass substrates by RF sputtering: Structural and Electrical properties

Sanusi Abdullahi; Abubakar A. Sifawa

doi:10.4314/cajost.v2i1.32

Indium-Tin Oxide (ITO) thin films deposited at low substrate temperature on bare corning glass substrates by RF sputtering: Structural and Electrical properties

Authors

Sanusi Abdullahi Department of Physics, Usmanu Danfodiyo University Sokoto, Nigeria
Abubakar A. Sifawa Department of Physics, Sokoto state University Sokoto, Nigeria

DOI:

https://doi.org/10.4314/cajost.v2i1.32

Keywords:

ITO, RF sputtering, sheet resistance, resistivity, bare corning glass

Abstract

To study the structural and electrical properties of Indium Tin Oxide (ITO) thin
films, a set of ITO samples with different thicknesses were deposited by Radio
Frequency (RF) sputtering technique. X-ray diffraction measurement shows that
the crystal quality of ITO films was improved with the increase of film thickness
and the annealing temperature. The resistivity decrease of ITO films with
increase of film thickness owes to the change of carrier concentration for
annealed thin films, and attributes to the improvement of the crystallinity.

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Published

02/21/2020

Issue

Vol. 2 No. 1 (2020): CaJoST

Section

Articles

How to Cite

Indium-Tin Oxide (ITO) thin films deposited at low substrate temperature on bare corning glass substrates by RF sputtering: Structural and Electrical properties. (2020). CaJoST, 2(1), 13-17. https://doi.org/10.4314/cajost.v2i1.32